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FDMD85100 Dual N-Channel PowerTrench® MOSFET
September 2015
FDMD85100
Dual N-Channel PowerTrench® MOSFET
Q1: 100 V, 48A, 9.9 mΩ Q2: 100 V, 48A, 9.9 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Q2: N-Channel
Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A
Ideal for flexible layout in primary side of bridge topology Termination is Lead-free and RoHS Compliant 100% UIL tested Kelvin High Side MOSFET drive pin-out capability
This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Applications
Synchronous Buck : Primary Switch of Half / Full Bridge Bonverter for Telecom
Motor Bridge : Primary Switch of Half / Full Bridge Converter for BLDC Motor
MV POL :.