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FDMS4435BZ

Fairchild Semiconductor
Part Number FDMS4435BZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 10, 2017
Detailed Description FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ Features „ Max r...
Datasheet PDF File FDMS4435BZ PDF File

FDMS4435BZ
FDMS4435BZ

Overview
FDMS4435BZ P-Channel Power Trench® MOSFET FDMS4435BZ P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ Features „ Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.
0 A „ Max rDS(on) = 37 mΩ at VGS = -4.
5 V, ID = -6.
5 A „ Extended VGSS range (-25 V) for battery applications „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability „ HBM ESD protection level >7 kV typical (Note 4) „ 100% UIL tested „ Termination is Lead-free and RoHS Compliant October 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.
This de...


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