JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
D882M TRANSISTOR (NPN)
TO...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate
Transistors
D882M
TRANSISTOR (
NPN)
TO-252-2L
FEATURES Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 40 30 5 3 1.25 150
-55-150
Unit V V V A W
℃ ℃
1. BASE 2. COLLECTOR 3 .EMITTER
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified )
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Transition frequency
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO hFE VCE (sat) VBE (sat)
fT
IC = 100μA, IE=0 IC =...
