General Purpose Transistors
D882M-G
RoHS Device
Features
- Power Dissipation - High collector current. - High current g...
General Purpose
Transistors
D882M-G
RoHS Device
Features
- Power Dissipation - High collector current. - High current gain. - Low collector-emitter saturation voltage.
Diagram
- 1. BASE - 2. COLLECTOR - 3. EMITTER
2
C
1
B
E
3
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol Value Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector power dissipation Junction temperature range
VCBO VCEO VEBO
IC PC TJ
40 V 30 V 6V 3A 1.25 W 150 °C
Storage temperature range
TSTG
-55 to +150 °C
TO-252-2L
0.264(6.70) 0.256(6.50) 0.215(5.46) 0.202(5.13)
0.409(10.40) 0.386( 9.80)
0.055(1.40) Φ 0.031(0.80)
0.051(1.30) 0.043(1.10) 123
0.070(1.78) REF.
0.190(4.83 ) REF.
0.030(0.76 ) REF.
0.090(2.29) Typ.
0.186(4.73) 0.170(4.33)
0.032(0.81) 0.028(0.71)
0.094(2.38) 0.087(2.20)
0.022(0.56) 0.018(0.46)
0.004(0.10) MAX.
0.244(6.20) 0.236(6.00)
0.067(1.70) 0.055(1.40)
0.114(2.90) REF.
0.022(0.56) 0.018(0.46)
...
