MOSFET
FDS86140 N-Channel PowerTrench® MOSFET
March 2011
FDS86140
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Featur...
Description
FDS86140 N-Channel PowerTrench® MOSFET
March 2011
FDS86140
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
General Description
Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
ruggedness.
Applications
DC/DC Converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Swith for 24 V and 48 V Systems
High Voltage Synchronous Rectifier
D D D
D
SO-8
Pin 1
G S S S
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Dr...
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