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N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.016Ω MAX Ultra High-Speed Switching SOP-8 Package
Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems
General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) Rds(on)=0.022Ω(Vgs=2.5V) Rds(on)=0.045Ω(Vgs=1.5V)
Ultra high-speed switching Operational Voltage: 1.5V High density mounting: SOP-8
Pin Configuration
S1 S2 S3 G4
SOP-8 (TOP VIEW)
8D 7D 6D 5D
Equivalent Circuit
18 27 36 45
N-Channel MOS FET (1 device built-in)
Pin Assignment
PIN NUMBER
PIN NAME
1~3 S
4G
5~8 D
FUNCTION
Source Gate Drain
u
Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS.