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FERD20H100S

STMicroelectronics

100V field-effect rectifier diode

FERD20H100S Datasheet 100 V, 20 A field-effect rectifier diode A K A TO-220AB A K A TO-220FPAB A K A K K A KA ...


STMicroelectronics

FERD20H100S

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FERD20H100S Datasheet 100 V, 20 A field-effect rectifier diode A K A TO-220AB A K A TO-220FPAB A K A K K A KA IPAK K K A A A A DPAK Product status FERD20H100S Product summary Symbol Value IF(AV) 20 A VRRM 100 V VF(max.) 0.415 V IR(max.) 140 µA T j(max.) 175 °C Features ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation Insulated package TO-220FPAB: – Insulated voltage: 2000 VRMS sine ECOPACK2 compliant component Applications Switching diode Notebook adapter LED lighting DC/DC converter MPPT Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes. DS11526 - Rev 4 - June 2020 For further information contact your local STMicroelectronics sales office. www.st.com FERD20H100S Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) Forward rms cu...




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