STGYA120M65DF2

STGYA120M65DF2 Datasheet Trench gate field-stop, 650 V, 120 A, low-loss M series IGBT in a Max247 long leads package TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) Features Maximum junction temperature: TJ = 175 °C 6 μs of minimum short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft- and fast-recovery antiparallel diode Applications Motor control UPS PFC General purpose inverter Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGYA120M65DF2 Product summary Order code STGYA120M65DF2 Marking G120M65DF2 Package Max247 long leads Packing Tube DS11593 - Rev 6 - February 2023 For further information contact your local STMicroelectronics sales office. www.st.com STGYA120M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collec...