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STGW10M65DF2 Dataheets PDF



Part Number STGW10M65DF2
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description IGBT
Datasheet STGW10M65DF2 DatasheetSTGW10M65DF2 Datasheet (PDF)

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-.

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STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW10M65DF2 Table 1: Device summary Marking G10M65DF2 Package TO-247 Packing Tube March 2016 DocID029083 Rev 1 Th.


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