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STGF4M65DF2

STMicroelectronics

IGBT


Description
STGF4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TO-220FP Figure 1: Internal schematic diagram C (2) G (1) Features  6 µs of short-circuit withstand time  VCE(sat) = 1.6 V (typ.) @ IC = 4 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparal...



STMicroelectronics

STGF4M65DF2

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