N-CHANNEL POWER MOSFET
STD5N60DM2
N-channel 600 V, 1.38 Ω typ., 3.5 A MDmesh™ DM2 Power MOSFET in a DPAK package
Datasheet - production data
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Description
STD5N60DM2
N-channel 600 V, 1.38 Ω typ., 3.5 A MDmesh™ DM2 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code
VDS RDS(on) max.
ID
PTOT
STD5N60DM2 600 V
1.55 Ω
3.5 A 45 W
Figure 1: Internal schematic diagram
Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Order code STD5N60DM2
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Table 1: Device summary
Marking
Package
Packing
5N60DM2
DPAK
Tape and reel
July 2016
DocID029525 Rev 1
This is information on a product in full production.
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