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STD5N60DM2

STMicroelectronics

N-CHANNEL POWER MOSFET

STD5N60DM2 N-channel 600 V, 1.38 Ω typ., 3.5 A MDmesh™ DM2 Power MOSFET in a DPAK package Datasheet - production data ...


STMicroelectronics

STD5N60DM2

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Description
STD5N60DM2 N-channel 600 V, 1.38 Ω typ., 3.5 A MDmesh™ DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STD5N60DM2 600 V 1.55 Ω 3.5 A 45 W Figure 1: Internal schematic diagram  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Order code STD5N60DM2 Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Marking Package Packing 5N60DM2 DPAK Tape and reel July 2016 DocID029525 Rev 1 This is information on a product in full production. 1/15...




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