Document
STD140N6F7
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
Datasheet - production data
Features
Order code STD140N6F7
VDS 60 V
RDS(on) max. 3.8 mΩ
ID 80 A
PTOT 134 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
AM01475v1_Tab
Order code STD140N6F7
Table 1: Device summary
Marking
Package
140N6F7
DPAK
Packing Tape and reel
April 2016
DocID028801 Rev 2
This is information on a product in full production.
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www.st.com
Contents
Contents
STD140N6F7
1 Electrical ratings ..............