STB5N80K5

STB5N80K5 N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a D²PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features Order code STB5N80K5 VDS 800 V RDS(on) max. 1.75 Ω ID 4A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STB5N80K5 Table 1: Device summary Marking Package 5N80K5 D²PAK Packing Tape and reel May 2016 DocID028512 Rev 2 This is information on a product in full production. 1/15 www.st.com Contents Contents STB5N80K5 1 Electrical rating...