Document
FERD30H100S
100 V field-effect rectifier diode
Datasheet - production data
A
K
KA
K
A K A
TO-220AB
A KA
K IPAK
KA A
DPAK
Features
ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation
Description
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.
Table 1: Device summary
Symbol
Value
IF(AV) VRRM VF (max.) IR (max.) Tj (max.)
30 A 100 V 0.405 V 130 µA 175 °C
April 2016
DocID029159 Rev 1
This is information on a product in full production.
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