A1SHB

HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment Application ● PWM applications ● Load switch SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A12SHB HM2301B SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current -Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -20 ±12 -2.5 -10 0.9 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 138 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V Min Typ Max Unit -20 - V - - -1 μA Parameter Gate-Body Leakage Current On Character...