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NGTB40N65IHL2WG Dataheets PDF



Part Number NGTB40N65IHL2WG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet NGTB40N65IHL2WG DatasheetNGTB40N65IHL2WG Datasheet (PDF)

NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features • Extremely Efficient Trench with Fieldstop.

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NGTB40N65IHL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage. Features • Extremely Efficient Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Losses in IH Cooker Application • TJmax = 175°C • Soft, Fast Free Wheeling Diode • This is a Pb−Free Device Typical Applications • Inductive Heating • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°.


NGTB40N65FL2WG NGTB40N65IHL2WG VA7070


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