MIP3E50MY

MIP3E50MY MOS (IPD) ■ (MIP2ExD ■ ■ 50% ) VD 700 VC 8 ID 1.98 IDP 3.1 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ TO-220-A2 1: Control 2: Source 3: Drain ■ : MIP3E50MY Drain Max. duty clock SQ RQ SQ RQ MOSFET : 2010 3 SLB00058BJD Source 1 MIP3E50MY ■ TC = 25°C ± 3°C PWM / ) *: fOSC VC = VC(CNT) − 0.2 V, VD = 5 V MAXDC VC = VC(CNT) − 0.2 V, VD = 5 V * GPWM VC = VC(CNT) IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) ∆VC VC(CLP) TSW / TTIM fTIM IC(CHG) VC(CNT) * ∆VC(CNT) VD(MIN) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V VC = 0 V, VD = 40 V VC = 5 V, VD = 40 V VD = 5 V VD = 5 V * * * * ILIMIT ton(BLK) td(OCL) TOTP VC reset RDS(on) IDSS ID = 0.3 A VDS = 650 V, VC = 6.5 V VDSS ID = 1 mA, VC = 6.5 V tr VC = VC(CNT) − 0.2 V, VD = 5 V tf VC = VC(CNT) − 0.2 V, VD = 5 V * Rth(ch-c) * Rth(ch-a) 90 100 110 kHz 60 64 6...