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SSH10N80A

Samsung
Part Number SSH10N80A
Manufacturer Samsung
Description Advanced Power MOSFET
Published Dec 31, 2016
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SSH10N80A PDF File

SSH10N80A
SSH10N80A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
) @ VDS = 700V Low RDS(ON) : 1.
552 Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC ) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 ΟC) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum...


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