Power Transistor 2SD2382
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
65±5 V
VCEO
65±5 V
VEBO
6...
Power
Transistor 2SD2382
Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VCBO
65±5 V
VCEO
65±5 V
VEBO
6V
IC
±6 (pulse ±10)
A
IB 1 A
PC
30 (Tc=25ºC)
W
Tj 150 ºC
Tstg
–55 to +150
ºC
Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b
Test Conditions VCB = 60V VEB = 6V IC = 50mA
VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA
IFEC = 6A L = 10mH, single pulse
Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min
(Ta=25ºC) Unit µA µA V
V V mJ
Typical Switching Characteristics
VCC RL (V) (Ω)
12 12
IC VBB1 VBB2 IB1 IB2 ton tstg tf (A) (V) (V) (mA) (mA) (µs) (µs) (µs)
1 10 –5 30 –30 0.25 0.8 0.35
External Dimensions TO220F (full-mold)
10.0
3.3
4.2 2.8 C0.5
0.8 4 8.4
16.9
a b
1.35 1.35
0.85
2.54
2.54
2.2
BCE
3.9 (13.5)
2.6
0.45
a) Part No. b) Lot No. (Unit: mm)
■ IC — VCE Characteristics (typ.)
10 30mA
8
6
20mA 10mA
IC (A)
5mA 4
3mA
2 IB = 1mA
0 01 234 5 VCE (V)
■ VCE (sat) — IB Temperatur...
