N-Channel Super Junction Power MOSFET
NCE65R180T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction...
Description
NCE65R180T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS RDS(ON) MAX
ID
650 180 21
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R180T
TO-247
NCE65R180T
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25...
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