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STN8205D

Stanson

Dual N Channel Enhancement Mode MOSFET


Description
STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, s...



Stanson

STN8205D

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