STW24N60DM2

STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg 2 Power MOSFETs in D PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Features Order codes STB24N60DM2 STP24N60DM2 STW24N60DM2 VDS @ TJmax 650 V RDS(on) max ID 0.20 Ω 18 A Extremely low gate charge and input capacitance Lower RDS(on) x area vs previous generation Low gate input resistance 100% avalanche tested Zener-protected Extremely high dv/dt and avalanche capabilities Applications G(1) Switching applications Description These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ S(3) AM01476v1 technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest ...