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D2385

Part Number	D2385
Manufacturer	Toshiba
Description	2SD2385
Published	Dec 23, 2016
Detailed Description	2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Appli...
Datasheet	D2385 PDF File

Overview

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140 5 8 0.
1 120 150 −55 to 150 Equivalent Circuit Unit V V V A A W °C °C COLLECTOR BASE JEDEC ― JEITA ― TOSHIBA 2-21F1A Weight: 9.
75 g (typ.
) ≈ 100 Ω EMITTER 1 2003-02-04 2SD2385 Electric...

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