HCS80R250T Super Junction MOSFET
August 2016
HCS80R250T
800V N-Channel Super Junction MOSFET
Description
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 850 18 0.25 58
Unit V A ȍ nC
Features
Switch Mode Power...
