Document
HCS60R350T Super Junction MOSFET
Jan 2016
HCS60R350T
600V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 650 11 0.35 17.5
Unit V A ȍ nC
Application
Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) TV power & LED Lighting Power
Package & Internal Circuit
TO-220F
G D S
Absolute Maximum Ratings TJ=25 unless otherwise specified
Symbol
Parameter
Value
VDSS VGS
ID
IDM EAS PD TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25) Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case fo.