MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor IPx80R1K4CE
Data...
MOSFET
MetalOxideSemiconductorFieldEffect
Transistor
CoolMOS™CE
800VCoolMOS™CEPower
Transistor IPx80R1K4CE
DataSheet
Rev.2.3 Final
PowerManagement&Multimarket
800VCoolMOS™CEPower
Transistor
IPD80R1K4CE,IPU80R1K4CE
1Description
CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns.
Features
Highvoltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances Qualified according to JEDEC Standard Pb-freeleadplating;RoHScompliant; halogenfreemoldcompound
DPAK
tab
2 1
3
IPAK
tab
1 23
Drain Pin 2
Gate Pin 1
Source Pin 3
Benefits
Increasedpowerdensitysolutionsduetosmallerpackage Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetolowoperatingtemperatures
Applications
LEDLightingforretrofitapplicationsinQRFlybacktopology
Table1KeyPerformanceParameters
Parameter VDS @ Tj=25°C RDS(on),max Qg,typ ID,pulse VGS(th),typ CO(tr),typ
Value 800 1.4 23 12 3 51
Unit V Ω nC A V pF
Type/OrderingCode IPD80R1K4CE IPU80R1K4CE
Package PG-TO 252 PG-TO 251
Marking 8R1K4CE
RelatedLinks see Appendix A
Final Data Sheet
2
Rev. 2.3, 2020-05-20...