BCF120T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 1200 µm)
The BeRex BCF120T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 1200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain and medium power from DC to 26.5 GHz. This product is well ...
