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IPB025N10N3G

Infineon

MOSFET


Description
OptiMOS™3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Extremely low on-resistance R DS(on) High current capability 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Type IPB025N10...



Infineon

IPB025N10N3G

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