Document
IPT111N20NFD
MOSFET
OptiMOSª3Power-Transistor,200V
Features
•N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 200 V
RDS(on),max
11.1
mΩ
ID 96 A
HSOF
12345 678
Tab
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT111N20NFD
Package PG-HSOF-8
Marking 111N20NF
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.1,2016-02-23
OptiMOSª3Power-Transistor,200V
IPT111N20NFD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . ..