OptiMOS™2 Power-Transistor
Features • Very low gate charge for high frequency applications • Optimized for dc-dc convers...
OptiMOS™2 Power-
Transistor
Features Very low gate charge for high frequency applications Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Halogen-free according to IEC61249-2-21
BSC100N10NSF G
Product Summary
V DS R DS(on),max ID
100 V 10 mΩ 90 A
PG-TDSON-8
Type BSC100N10NSF G
Package PG-TDSON-8
Marking 100N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C, R thJA=50 K/W2)
Pulsed drain current3) Avalanche energy, single pulse Gate source voltage
I D,pulse E AS V GS
T C=25 °C I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
90...
