Power-Transistor
BSC100N03LS G
OptiMOS™3 Power-MOSFET
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC convert...
Description
BSC100N03LS G
OptiMOS™3 Power-MOSFET
Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID
30 V 10 mΩ 44 A
PG-TDSON-8
Type BSC100N03LS G
Package PG-TDSON-8
Marking 100N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
44 A 28
Pulsed drain current3) Avalanche current, single pulse4) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22
V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
I D,pulse...
Similar Datasheet