BSC048N025SG

OptiMOS®2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC1 for target applications Logic level / N-channel Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant BSC048N025S G Product Summary V DS R DS(on),max ID 25 V 4.8 mΩ 89 A PG-TDSON-8 Type BSC048N025S G Package PG-TDSON-8 Marking 48N025S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt I D,pulse E AS dv /dt T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation V GS P tot T C=25 °C T A=25 °C, R thJA=45...