OptiMOS®2 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converter...
OptiMOS®2 Power-
Transistor
Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC1 for target applications Logic level / N-channel Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant
BSC048N025S G
Product Summary V DS R DS(on),max ID
25 V 4.8 mΩ 89 A
PG-TDSON-8
Type BSC048N025S G
Package PG-TDSON-8
Marking 48N025S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C, R thJA=45 K/W2)
Pulsed drain current Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse E AS
dv /dt
T C=25 °C3)
I D=50 A, R GS=25 Ω
I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C
Gate source voltage Power dissipation
V GS P tot
T C=25 °C
T A=25 °C, R thJA=45...