OptiMOSTM3 Power-Transistor
Features • Optimized technology for synchronous rectification
• Ideal for high frequency s...
OptiMOSTM3 Power-
Transistor
Features Optimized technology for synchronous rectification
Ideal for high frequency switching and DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21
Type
BSC042NE7NS3 G
Product Summary V DS R DS(on),max ID
BSC042NE7NS3 G
75 V 4.2 mΩ 100 A
Package Marking
PG-TDSON-8 042NE7NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
Value 100 83
Unit A
V GS=10 V, T A=25 °C, R thJA=50 K/W2)
19
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 Ω
220 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm ...
