10N65F

10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 10N65 ITO-220AB 10N65F TO-263 10N65B TO-262 10N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 10N65 650 ±30 10 40 300 10 30 5.5 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation TC=25℃ Symbol RthJC PD I...