OptiMOS®2 Power-Transistor
Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low...
OptiMOS®2 Power-
Transistor
Features N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Type
IPP12CN10L G
IPS12CN10L G
IPS12CN10L G IPP12CN10L G
100 V 12 mW 69 A
Package
PG-TO220-3
PG-TO251-3-11
Marking
12CN10L
12CN10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=69 A, R GS=25 W
Reverse diode dv /dt
dv /dt
I D=69 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic cate...
