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IPC100N04S5L-1R1 Dataheets PDF



Part Number IPC100N04S5L-1R1
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPC100N04S5L-1R1 DatasheetIPC100N04S5L-1R1 Datasheet (PDF)

IPC100N04S5L-1R1 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.1 m 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Product (RoHS compliant) 1 • 100% Avalanche tested Type IPC100N04S5L-1R1 Package Marking PG-TDSON-8-34 5N04L1R1 Maximum ratings, at T j=25 °C, unless otherwise specified .

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IPC100N04S5L-1R1 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.1 m 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green Product (RoHS compliant) 1 • 100% Avalanche tested Type IPC100N04S5L-1R1 Package Marking PG-TDSON-8-34 5N04L1R1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=50A I AS - V GS - P tot T C=25°C T j, T stg - Value 100 100 400 480 100 ±16 150 -55 ... +175 Unit A mJ A V W °C Rev. 1.1 page 1 2016-09-07 IPC100N04S5L-1R1 Paramet.



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