Power-Transistor
BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Features • Optimized for high switching frequency DC/DC converter • Very low on-r...
Description
BSF083N03LQ G
OptiMOSTM2 Power-MOSFET
Features Optimized for high switching frequency DC/DC converter Very low on-resistance R DS(on) Excellent gate charge x R DS(on) product (FOM)
Product Summary V DS R DS(on),max ID
30 8.3 53
Low profile (<0.7 mm)
Double-sided cooling Low parasitic inductance
MG-WDSON-2
100% avalanche tested
Qualified for consumer level application Compatible with DirectFET® package SQ footprint and outline 1)
Pb-free plating; RoHS compliant
V mΩ A
Type BSF083N03LQ G
Package MG-WDSON-2
Outline SQ
Marking 6003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
53 A
V GS=10 V, T C=100 °C
33
V GS=10 V, T A=25 °C, R thJA=58 K/W2)
13
Pulsed drain current3) Avalanche current, single pulse4)
I D,pulse I AS
T C=25 °C T C=25 °C
212 50
Avalanche energy, single pulse
E AS I D=38 A, R GS=25 Ω
30 mJ
Ga...
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