BSF083N03LQG

BSF083N03LQ G OptiMOSTM2 Power-MOSFET Features Optimized for high switching frequency DC/DC converter Very low on-resistance R DS(on) Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 8.3 53 Low profile (<0.7 mm) Double-sided cooling Low parasitic inductance MG-WDSON-2 100% avalanche tested Qualified for consumer level application Compatible with DirectFET® package SQ footprint and outline 1) Pb-free plating; RoHS compliant V mΩ A Type BSF083N03LQ G Package MG-WDSON-2 Outline SQ Marking 6003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 53 A V GS=10 V, T C=100 °C 33 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 13 Pulsed drain current3) Avalanche current, single pulse4) I D,pulse I AS T C=25 °C T C=25 °C 212 50 Avalanche energy, single pulse E AS I D=38 A, R GS=25 Ω 30 mJ Ga...