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BSC500N20NS3G

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MOSFET

BSC500N20NS3G MOSFET OptiMOSTM3Power-Transistor,200V Features •N-channel,normallevel •Excellentgatechargex...


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BSC500N20NS3G

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Description
BSC500N20NS3G MOSFET OptiMOSTM3Power-Transistor,200V Features N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Halogen-freeaccordingtoIEC61249-2-21 Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 50 mΩ ID 24 A PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC500N20NS3 G Package PG-TDSON-8 Marking 500N20NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2023-05-31 OptiMOSTM3Power-Transistor,200V BSC500N20NS3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 El...




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