Si4943CDY

New Product Dual P-Channel 20-V (D-S) MOSFET Si4943CDY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 0.0192 at VGS = - 10 V 0.0330 at VGS = - 4.5 V ID (A)a, e -8 -8 Qg (Typ.) 20 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching - Computer - Game Systems Battery Switching - 2-Cell Li-Ion S1 S2 G1 G2 Top View Ordering Information: Si4943CDY-T1-E3 (Lead (Pb)-free) Si4943CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 P-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (10 µs Pulse Width) TA = 70 °C IDM Source-Drain Current Diode Current Puls...