Document
Dual N-Channel 30-V (D-S) MOSFET
Si4922BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.016 at VGS = 10 V 30 0.018 at VGS = 4.5 V
0.024 at VGS = 2.5 V
ID (A)a, e 8 8 8
Qg (Typ.) 19
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4922BDY-T1-E3 (Lead (Pb)-free) Si4922BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS tested • Compliant to RoHS Directive 2002/95/EC
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current (10 µs Pulse Width)
TA = 70 °C
IDM
Source-Drain Current Diode Current Pulsed Sorce-Drain Current
TC = 25 °C TA = 25 °C
IS ISM
Single Pulse Avalanche Current Single-Pul.