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Si4567DY

Vishay

N- and P-Channel 40-V (D-S) MOSFET

Si4567DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY N-Channel N-Channel VDS (V) RDS(on) (Ω)...


Vishay

Si4567DY

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Si4567DY Vishay Siliconix N- and P-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY N-Channel N-Channel VDS (V) RDS(on) (Ω) 40 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V - 40 0.085 at VGS = - 10 V 0.122 at VGS = - 4.5 V ID (A)a 5.0 4.7 - 4.4 - 3.7 Qg (Typ.) 5.6 6 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free) Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS CCFL Inverter D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS ± 16 TC = 25 °C 5 - 4.4 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 4.7 4.1b, c - 3.7 - 3.6b, c TA = 70 °C 3.3b, c - 2.9b, c Pulsed Drain Current (10 µs Pulse Width) I...




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