N- and P-Channel 40-V (D-S) MOSFET
Si4567DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel N-Channel
VDS (V)
RDS(on) (Ω)...
Description
Si4567DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel N-Channel
VDS (V)
RDS(on) (Ω)
40 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V
- 40 0.085 at VGS = - 10 V 0.122 at VGS = - 4.5 V
ID (A)a 5.0 4.7 - 4.4 - 3.7
Qg (Typ.) 5.6 6
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4567DY-T1-E3 (Lead (Pb)-free) Si4567DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21 Available
TrenchFET® Power MOSFET 100 % Rg Tested
APPLICATIONS CCFL Inverter
D1
S2
G2 G1
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 40
- 40
Gate-Source Voltage
VGS
± 16
TC = 25 °C
5 - 4.4
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
4.7 4.1b, c
- 3.7 - 3.6b, c
TA = 70 °C
3.3b, c
- 2.9b, c
Pulsed Drain Current (10 µs Pulse Width)
I...
Similar Datasheet