Freescale Semiconductor Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
De...
Freescale Semiconductor Technical Data
RF Power Field Effect
Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
Gps (dB)
ηD Output PAR ACPR
(%)
(dB)
(dBc)
920 MHz 940 MHz 960 MHz
23.1 23.1 22.8
36.4 36.4 36.6
6.3 --35.5 6.2 --36.1 6.1 --35.8
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ≃ 100 Watts CW 880 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, C...
