MOSFET
IPA65R190C7
MOSFET
650VCoolMOSªC7PowerDevice
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,...
Description
IPA65R190C7
MOSFET
650VCoolMOSªC7PowerDevice
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability.
Features
IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Easytouse/drive Pb-freeplating,halogenfreemoldcompound
Benefits
Enablinghighersystemefficiency Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures
Potentialapplications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar.
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max RDS(on),max Qg.typ ID,pulse Eoss@400V
700 190 23 49 2.7
V mΩ nC A µJ
Body diode di/dt
55
A/µs
Type/OrderingCode IPA65R190C7
Package P...
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