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IPA65R045C7

Infineon

MOSFET

IPA65R045C7 MOSFET 650VCoolMOSªC7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,...


Infineon

IPA65R045C7

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Description
IPA65R045C7 MOSFET 650VCoolMOSªC7PowerDevice CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassinnovation.Theproductportfolio providesallbenefitsoffastswitchingsuperjunctionMOSFETsoffering betterefficiency,reducedgatecharge,easyimplementationand outstandingreliability. Features IncreasedMOSFETdv/dtruggedness BetterefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg BestinclassRDS(on)/package Easytouse/drive Pb-freeplating,halogenfreemoldcompound Benefits Enablinghighersystemefficiency Enablinghigherfrequency/increasedpowerdensitysolutions Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetoloweroperatingtemperatures Potentialapplications PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server, Telecom,UPSandSolar. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 700 V RDS(on),max 45 mΩ Qg.typ 93 nC ID,pulse 212 A Eoss@400V 11.7 µJ Body diode di/dt 60 A/µs Type/OrderingCode IPA65R045...




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