Type
OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology...
Type
OptiMOSTM3 Power-
Transistor
Features
Ideal for high frequency switching and sync. rec.
Optimized technology for DC/DC converters
Excellent gate charge x R DS(on) product (FOM) Very low on-resistance RDS(on)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Halogen-free according to IEC61249-2-21
Type
IPA032N06N3 G
IPA032N06N3 G
Product Summary VDS RDS(on),max ID
60 V 3.2 mW 84 A
Package Marking
PG-TO220-3-31 032N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3 for...
