CD3600

IN4148 AVAILABLE IN JANHC AND JANKC SWITCHING DIODE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES WITH THE EXCEPTION OF SOLDER REFLOW CD4148 CD914 CD3600 CD4150 CD4153 CD4454 MAXIMUM RATINGS Operating Temperature: -55°C to +175°C Storage Temperature: -65°C to +175°C ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified VBR @100 µ A Volts (min) CD914 CD4148 CD4454 100 100 75 VRWM IO VF1 @IF = 10mA Vdc 0.8 0.8 1.0 VF2 @IF = 50mA Vdc 1.2 N/A N/A VF3 @IF = 100mA Vdc N/A 1.2 N/A t rr TYPE Volts (pk) 75 75 50 mA 75 200 200 n sec 5 5 4 BACKSIDE IS CATHODE TYPE IR1 @20Vdc nA CD914 CD4148 CD4454 25 25 N/A IR2 IR3 @20Vdc TA+150°C IR4 TA+150°C µA@V 75 @ 75 75 @ 75 100 @ 50 CAPACITANCE @OV pF 4.0 4.0 2.0 CAPACITANCE @1.5V pF 2.8 2.8 N/A FIGURE 1 µA@V 0.5 @ 75 0.5 @ 75 0.1 @ 50 µA 35 35 N/A VBR TYPE IR = 10 µ A* VOLTS (MIN) CD3600 CD4150 CD4153 75 75 75* VRWM I R1 VR = 50 Vdc TA = 25˚C µ A dc 0.10 0.10 0.05 V (pk) 50 50 50 I R2 VR = 50 Vdc TA = 150˚C µ A dc 100 100 50 C VR = 0:f = 1 Mhz; ac signals = 50m V (p-p) pF 2.5 2.5 2.0 trr DESIGN DATA METALLIZATION: Top: (Anode) ....................Al Back: (Cathode)..............Au AL THICKNESS ............25,000 Å Min GOLD THICKNESS ........4,000 Å Min ns 4 4 4 *@5 µ A for CD4153 FORWARD VOLTAGE LIMITS - CD3600 and CD4150 CHIP THICKNESS ..................10 Mils LIMITS VF1 IF = 1mA dc V dc minimum maximum 0.540 0.620 VF2 IF = 10mA dc V...