MRF553

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF553/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF553 1.5 W, 175 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C (1, 2) Derate above 75°C VCEO VCBO VEBO IC PD Storage Temperature Range THERMAL CHARACTERISTICS Tstg Characteristic Thermal Resistance Junction to Case Value 16 36 4.0 500 3.0 40 – 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/...