RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF559 MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Featu...
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
MRF559 MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Features
Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability
Macro X
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TC = 75ºC Derate above 75ºC
Storage Temperature Range
Value 16 30 3.0 150
Unit Vdc Vdc Vdc mA
2.0 20
-65 to +150
Watts mW/ ºC
ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
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