DatasheetsPDF.com

MRF559

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Description

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed prim...

Advanced Power Technology

Download MRF559 Datasheet

Similar Datasheet

MRF5003 N-CHANNEL BROADBAND RF POWER FET - Motorola
MRF5007 N-CHANNEL BROADBAND RF POWER FET - Motorola
MRF5007R1 N-CHANNEL BROADBAND RF POWER FET - Motorola
MRF501 (MRF501 / MRF502) High Frequency Transistors - Motorola Semiconductor
MRF5015 N-CHANNEL BROADBAND RF POWER FET - Motorola
MRF502 (MRF501 / MRF502) High Frequency Transistors - Motorola Semiconductor
MRF5035 N-CHANNEL BROADBAND RF POWER FET - Motorola
MRF511 HIGH FREQUENCY TRANSISTOR - Motorola
MRF515 High Frequency Transistor - Motorola
MRF517 HIGH FREQUENCY TRANSISTOR - Motorola

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)