Document
STK0380D
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
BVDDS=880V @Tjmax Low gate charge: Qg=19nC (Typ.) Low drain-source On resistance: RDS(on)=4.2Ω (Max.) RoHS compliant device
Halogen free package
Ordering Information
Part Number
Marking
Package
STK0380D
STK0380
TO-252
D
G S
TO-252
Marking Information
STK 0380 YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Peak diode recovery dv/dt (Note 3)
VDSS VGSS ID Tc=25C
Tc=100C IDM EAS IAR EAR PD dv/dt
Junction temperature Storage temperature range
TJ Tstg
* Limited only maximum junction temperature
Rev. date: 09-FEB-1.